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Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk-shell microspheres in a poly(3-hexylthiophene) layer
Friday, November 6, 2015 2:48
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Where size matters
Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05835J, Paper
DOI: 10.1039/C5NR05835J, Paper
Peng Wang, Quan Liu, Chun-Yu Zhang, Jun Jiang, Li-Hua Wang, Dong-Yun Chen, Qing-Feng Xu, Jian-Mei Lu
Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/11/preparing-non-volatile-resistive.html
