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Field-Effect Transistors based on Wafer-Scale, Highly Uniform Few-Layer P-type WSe2
Thursday, December 31, 2015 4:04
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Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR06180F, Paper
DOI: 10.1039/C5NR06180F, Paper
Philip Michael Campbell, Alexey Tarasov, Corey Joiner, Meng-Yen Tsai, Georges Pavlidis, Samuel Graham, William Jud Ready, E Vogel
The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type…
The content of this RSS Feed (c) The Royal Society of Chemistry
The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type…
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/12/field-effect-transistors-based-on-wafer.html
