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Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and capacitance-voltage measurements
Wednesday, November 21, 2012 20:41
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Zhiyong Zhang, Huilong Xu, and Hua Zhong et al.
Top gated graphene field-effect transistors were fabricated using yttrium oxide film as high-κ gate dielectric, and the gate voltage dependent drain current and gate capacitance characteristics were both measured on one graphene device. Based on the two kinds of data sets, we developed a method to … [Appl. Phys. Lett. 101, 213103 (2012)] published Wed Nov 21, 2012.
2012-11-21 20:08:13
Source: http://nanochemistry.blogspot.com/2012/11/direct-extraction-of-carrier-mobility.html
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