| Story Views | |
| Now: | |
| Last Hour: | |
| Last 24 Hours: | |
| Total: | |
Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers
Saturday, December 22, 2012 9:40
% of readers think this story is Fact. Add your two cents.
Where size matters
Ning Wang
Nanoscale , 2013, Advance Article
DOI: 10.1039/C2NR33434H, Paper
Lin Wang, Xiaolong Chen, Yang Wang, Zefei Wu, Wei Li, Yu Han, Mingwei Zhang, Yuheng He, Chao Zhu, Kwok Kwong Fung, Ning Wang
Top-gated graphene devices using Y2 O3 as dielectric layers show excellent electrical performance in both DC transport and AC capacitance measurements, which also allow us to investigate the origins of the disorder introduced by Y2 O3 layers.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
2012-12-22 09:33:43
Source: http://nanochemistry.blogspot.com/2012/12/modification-of-electronic-properties_22.html
Source:
